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Analog Integrated Circuit Design, 1st Edition by David Johns Ken Martin

By David Johns Ken Martin

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3 Advanced MOS Modelling 39 to-substrate capacitance. This capacitor is highly nonlinear and dependent on the gate voltage. 115) If the gate-to-source voltage is around 0 V, then C gb is equal 10 Cox in series with the channel-to-bulk depletion capacitance and is considerably smaller, especially when the substrate is lightly doped. Another case where C gb is small is just after a transistor has been turned off, before the channel has had time to accumulate. 115) is usually used for hand analysis as a worst-case estimate.

The intercept voltage value, V A, is called the Early voltage for bipolar transistors, with a typical value being from 50 V to 100 V. 129) Large-Signal Modelling A conducting BJT that has a VCE greater than VCE-sa! 3 V) is said to be operating in the active region. Such a collector-emitter voltage is required to ensure that none of the holes from the base go to the collector. A large-signal model of a BJT operating in the active region is shown in Fig. 30. Fig. 30 A large-signal model for a BJT in the active region.

This constant is usually between 2,000 and 8,000 for an npn BIT and is an upper limit on the attainable voltage gain for a single-transistor amplifier. The resistor rb models the resistance of the semiconductor material between the base contact and the effective base region due to the moderately lightly doped base p material (see Fig. 25). This resistor, although small (typically a few hundred ohms), can be important in limiting the speed of very-high-frequency low-gain BJT circuits and is a major source of noise.

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